Technical explanation
In a PERC cell, a dielectric layer (usually Al2O3 + SiNx) is deposited on the back of the P-Type cell. This layer reflects unabsorbed photons back to the cell (second chance absorption) and passivizes back surface defects. The improvement in efficiency compared to standard BSF cell is +0.5 to +1.0 absolute point. PERC suffers from an intrinsic defect: LID (Light Induced Degradation) degradation which is more marked in P-Type, and LeTID degradation under certain thermal conditions. The TOPCon N-Type solves both of these problems.
